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29LV8 2SK13 2SC1662C 25L32 UPD6125A 21010 ECT25S32 AN126
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0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0.1 1 10 s1nbb80 ta=150c[typ] ta= 25c[typ] 5 2 0.2 0.5 forward voltage i f [a] forward current pulse measurement per diode v f [v] forward voltage
0 0.5 1 1.5 2 0 0.2 0.4 0.6 0.8 1 1.2 sin s1nbb80 forward power dissipation p f [w] i o [a] average rectified forward current forward power dissipation tj = 150c
0 20 40 60 80 100 120 140 160 0 0.2 0.4 0.6 0.8 1 1.2 sin s1nbb80 v r = v rm i o [a] ta [c] ambient temperature average rectified forward current derating curve glass-epoxy substrate soldering land 9mm x 9mm conductor layer 35 m
0 10 20 30 40 50 60 1 10 100 s1nbb80 25 20 50 peak surge forward capability number of cycles [cycle] i fsm [a] peak surge forward current i fsm 10ms 10ms 1 cycle non-repetitive, sine wave, tj=25c before surge current is applied


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